Semiconductor structure

ABSTRACT

Semiconductor structures are provided. Each of the transistors includes a first source/drain region over a semiconductor fin extending in a first direction, a second source/drain region over the semiconductor fin, a channel region in the semiconductor fin and between the first and second source/drain regions, and a metal gate electrode formed on the channel region and extending in a second direction perpendicular to the first direction. In a first transistor of the transistors, a first source/drain region is formed between the metal gate electrode of the first transistor and the metal gate electrode of a second transistor of the transistors, A second source/drain region is formed between the metal gate electrode of the first transistor and the dielectric-base dummy gate extending in the second direction. A first contact of the first source/drain region is narrower than a second contact of the second source/drain region along the first direction.

CROSS REFERENCE TO RELATED APPLICATIONS

This Application claims priority of U.S. Provisional Application No.62/752,691, filed on Oct. 30, 2018, the entirety of which isincorporated by reference herein.

BACKGROUND

The recent trend in miniaturizing integrated circuits (ICs) has resultedin smaller devices which consume less power, yet provide morefunctionality at higher speeds than before. The miniaturization processhas also resulted in various developments in IC designs and/ormanufacturing processes to ensure the desired production yield and theintended performance.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various nodes are not drawn to scale. In fact, the dimensions of thevarious nodes may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a simplified diagram of an IC, in accordance with someembodiments of the disclosure.

FIG. 2A illustrates the logic symbol of the logic cell STD_8 of FIG. 1,in accordance with some embodiments of the disclosure.

FIG. 2B is a circuit diagram of the logic cell STD_8 in FIG. 2A, inaccordance with some embodiments of the disclosure.

FIG. 3A illustrates the logic symbol of the logic cell STD_9 of FIG. 1,in accordance with some embodiments of the disclosure.

FIG. 3B is a circuit diagram of the logic cell STD_9 in FIG. 3A, inaccordance with some embodiments of the disclosure.

FIG. 4 illustrates the layout of the semiconductor structure of thelogic cells STD_8 and STD_9, in accordance with some embodiments of thedisclosure.

FIG. 5 illustrates a cross-sectional view of the semiconductor structureof the logic cells STD_8 and STD_9 along line A-AA in FIG. 4, inaccordance with some embodiments of the disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different nodes of the subject matterprovided. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. In some embodiments, theformation of a first node over or on a second node in the descriptionthat follows may include embodiments in which the first and second nodesare formed in direct contact, and may also include embodiments in whichadditional nodes may be formed between the first and second nodes, suchthat the first and second nodes may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Some variations of the embodiments are described. Throughout the variousviews and illustrative embodiments, like reference numbers are used todesignate like elements. It should be understood that additionaloperations can be provided before, during, and/or after a disclosedmethod, and some of the operations described can be replaced oreliminated for other embodiments of the method.

Furthermore, spatially relative terms, such as “beneath,” “below,”“lower,” “above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Various semiconductor structures of integrated circuits (ICs) areprovided in accordance with various exemplary embodiments. Somevariations of some embodiments are discussed. Throughout the variousviews and illustrative embodiments, like reference numbers are used todesignate like elements.

FIG. 1 is a simplified diagram of an IC 100, in accordance with someembodiments of the disclosure. A logic circuit 10 of the IC 100 includesa plurality of logic cells STD_1 through STD_20. In some embodiments,the logic cells STD_1 through STD_20 are the standard cells (e.g.,inverter (INV), AND, OR, NAND, NOR, Flip-Flop, SCAN, etc.), acombination thereof or specific functional cells. Furthermore, the logicfunctions of the logic cells STD_1 through STD_20 may be the same ordifferent. For example, the logic cells STD_1 through STD_20 may be thestandard cells corresponding to the same logic gates or different logicgates. Furthermore, each of the logic cells STD_1 through STD_20includes a plurality of transistors. In some embodiments, the logiccells STD_1 through STD_20 corresponding to the same function oroperation may have the same circuit configuration with differenttransistor sizes and different semiconductor structures.

In FIG. 1, the logic cells STD_1 through STD_20 have the same cell widthCW in the layout. The logic cells STD_1 through STD_5 are arranged in afirst column, the logic cells STD_6 through STD_10 are arranged in asecond column, the logic cells STD_11 through STD_15 are arranged in athird column, and the logic cells STD_16 through STD_20 are arranged ina fourth column. Furthermore, the logic cells STD_1 through STD_20 mayhave the same or different cell heights in the layout. For example, thelogic cells STD_1 and STD_2 have the same cell height CH1 and the logiccells STD_3 and STD_4 have the same cell height CH2, and the cell heightCH2 is greater than the cell height CH1.

In some embodiments, the logic cells STD_1 through STD_20 have the samecell height in the layout. Furthermore, the logic cells STD_1 throughSTD_20 may have the same or different cell widths in the layout.

In the logic cells STD_1 through STD_5, the NMOS transistors are formedin a P-type well region PW1, and the PMOS transistors are formed in anN-type well region NW1. In the logic cells STD_6 through STD_10, theNMOS transistors are formed in a P-type well region PW2, and the PMOStransistors are formed in the N-type well region NW1, and the N-typewell region NW1 is located between the P-type well regions PW1 and PW2.

In the logic cells STD_11 through STD_15, the NMOS transistors areformed in the P-type well region PW2, and the PMOS transistors areformed in an N-type well region NW2. In the logic cells STD_16 throughSTD_20, the NMOS transistors are formed in a P-type well region PW3, andthe PMOS transistors are formed in the N-type well region NW2, and theN-type well region NW2 is located between the P-type well regions PW2and PW3. It should be noted that the number and the configuration of theSTD_1 through STD_20 are used as an example, and not to limit thedisclosure.

FIG. 2A illustrates the logic symbol of the logic cell STD_8 of FIG. 1,in accordance with some embodiments of the disclosure. FIG. 2B is acircuit diagram of the logic cell STD_8 in FIG. 2A, in accordance withsome embodiments of the disclosure. The logic cell STD_8 is a NAND logicgate configured to provide an output signal OUT1 according two inputsignals IN1 and IN2. The NAND logic gate includes two PMOS transistorsP1 and P2 and two NMOS transistors N1 and N2. In some embodiments, thetwo PMOS transistors P1 and P2 and two NMOS transistors N1 and N2 may beplanar MOS transistors or fin field effect transistors (FinFETs) withsingle fin or multiple-fin.

In the NAND logic gate, the PMOS transistors P1 and P2 are coupled inparallel between a node 31 and a power supply VDD. The NMOS transistorN1 is coupled between the node 31 and the NMOS transistor N2, and theNMOS transistor N2 is coupled between the NMOS transistor N1 and aground VSS. The input signal IN1 is input to the gates of the PMOStransistor P1 and the NMOS transistor N1, and the input signal IN2 isinput to the gates of the PMOS transistor P2 and the NMOS transistor N2.Furthermore, the output signal OUT1 is provided at the node 31.

FIG. 3A illustrates the logic symbol of the logic cell STD_9 of FIG. 1,in accordance with some embodiments of the disclosure. FIG. 3B is acircuit diagram of the logic cell STD_9 in FIG. 3A, in accordance withsome embodiments of the disclosure. The logic cell STD_9 is a NOR logicgate configured to provide an output signal OUT2 according two inputsignals IN3 and IN4. The NOR logic gate includes two PMOS transistors P3and P4 and two NMOS transistors N3 and N4. In some embodiments, the twoPMOS transistors P3 and P4 and two NMOS transistors N3 and N4 may beplanar MOS transistors or fin field effect transistors (FinFETs) withsingle fin or multiple-fin.

In the NOR logic gate, the PMOS transistor P3 is coupled between a powersupply VDD and the PMOS transistor P4, and the PMOS transistor P4 iscoupled between the PMOS transistor P3 and a node 32. The NMOStransistors N3 and N4 are coupled in parallel between the node 32 and aground VSS. The input signal IN3 is input to the gates of the PMOStransistor P3 and the NMOS transistor N3, and the input signal IN4 isinput to the gates of the PMOS transistor P4 and the NMOS transistor N4.Furthermore, the output signal OUT2 is provided at the node 32.

FIG. 4 illustrates the layout of the semiconductor structure of thelogic cells STD_8 and STD_9, in accordance with some embodiments of thedisclosure. In FIG. 4, the NAND logic gate of FIGS. 2A and 2B isimplemented in the logic cell STD_8, and the NOR logic gate of FIGS. 3Aand 3B is implemented in the logic cell STD_9. The transistors of thelogic cells STD_8 and STD_9 are dual-fin FETs.

In the logic cell STD_8 of FIG. 4, the semiconductor fins 210 a and 210b extending in the Y-direction are formed over the N-type well regionNW1, and the semiconductor fins 210 c and 210 d extending in theY-direction are formed over the P-type well region PW2. A metal gateelectrode 220 a extending in the X-direction forms the PMOS transistorP1 with an underlying active region formed by the semiconductor fins 210a and 210 b over the N-type well region NW1. Furthermore, the metal gateelectrode 220 a forms the NMOS transistor N1 with an underlying activeregion formed by the semiconductor fins 210 c and 210 d in the P-typewell region PW2. In other words, the metal gate electrode 220 a isshared by the NMOS transistor N1 and the PMOS transistor P1. In someembodiments, the metal gate electrode 220 a is coupled to a conductiveline (not shown) extending in the Y-direction through a gate contact 255a and a via (not shown), and the conductive line is configured toconnect the metal gate electrode 220 a to an overlying level forreceiving the input signal IN1.

In the logic cell STD_8, a metal gate electrode 220 b extending in theX-direction forms the PMOS transistor P2 with an underlying activeregion formed by the semiconductor fins 210 a and 210 b over the N-typewell region NW1. Furthermore, the metal gate electrode 220 b forms theNMOS transistor N2 with an underlying active region formed by thesemiconductor fins 210 c and 210 d in the P-type well region PW2. Inother words, the metal gate electrode 220 b is shared by the NMOStransistor N2 and the PMOS transistor P2. The metal gate electrode 220 bis coupled to a conductive line (not shown) extending in the Y-directionthrough a gate contact 255 b and a via (not shown), and the conductiveline is configured to connect the metal gate electrode 220 b to anoverlying level for receiving the input signal IN2.

In the logic cell STD_8, the dielectric-base gates 225 a and 225 bextending in the X-direction are dummy gates. The gate electrodes 220 aand 220 b are arranged between the dielectric-base dummy gates 225 a and225 b, and the NMOS transistors N1 and N2 and the PMOS transistors P1and P2 are surrounded by the dielectric-base dummy gates 225 a and 225b. In other words, the dielectric-base dummy gates 225 a and 225 b arearranged in the boundary of the logic cell STD_8.

In the logic cell STD_8, the source region of the PMOS transistor P1 iscoupled to an overlying level through the second contact 245 a forcoupling the power supply VDD. Furthermore, the source region of thePMOS transistor P2 is coupled to an overlying level through the secondcontact 245 c for coupling the power supply VDD. Similarly, the sourceregion of the NMOS transistor N2 is coupled to an overlying levelthrough the second contact 245 d for coupling the ground VSS. The drainregions of the PMOS transistors P1 and P2 are coupled to a first contact240 a, and the drain region of the NMOS transistor N1 is coupled to asecond contact 245 b. Thus, the drain regions of the PMOS transistors P1and P2 are coupled to the drain region of the NMOS transistor N1 throughthe first contact 240 a, an overlying level, and the second contact 245b. Furthermore, the source region of the NMOS transistor N1 and thedrain region of the NMOS transistor N2 are coupled to the first contact240 b.

In the logic cell STD_9, the semiconductor fins 210 e and 210 fextending in the Y-direction are formed over the N-type well region NW1,and the semiconductor fins 210 g and 210 h extending in the Y-directionare formed over the P-type well region PW2. A metal gate electrode 220 cextending in the X-direction forms the PMOS transistor P3 with anunderlying active region formed by the semiconductor fins 210 e and 210f over the N-type well region NW1. Furthermore, the gate electrode 220 cforms the NMOS transistor N3 with an underlying active region formed bythe semiconductor fins 210 g and 210 h in the P-type well region PW2. Inother words, the metal gate electrode 220 c is shared by the NMOStransistor N3 and the PMOS transistor P3. The metal gate electrode 220 cis coupled to a conductive line (not shown) extending in the Y-directionthrough a gate contact 255 c and a via (not shown), and the conductiveline is configured to connect the metal gate electrode 220 c to anoverlying level for receiving the input signal IN3.

In the logic cell STD_9, a metal gate electrode 220 d extending in theX-direction forms the PMOS transistor P4 with an underlying activeregion formed by the semiconductor fins 210 e and 210 f over the N-typewell region NW1. Furthermore, the metal gate electrode 220 d forms theNMOS transistor N4 with an underlying active region formed by thesemiconductor fins 210 g and 210 h in the P-type well region PW2. Inother words, the metal gate electrode 220 d is shared by the NMOStransistor N4 and the PMOS transistor P4. The metal gate electrode 220 dis coupled to a conductive line (not shown) extending in the Y-directionthrough a gate contact 255 d and a via (not shown), and the conductiveline is configured to connect the metal gate electrode 220 d to anoverlying level for receiving the input signal IN4.

In the logic cell STD_9, the dielectric-base gates 225 b and 225 cextending in the X-direction are dummy gates. The gate electrodes 220 cand 220 d are arranged between the dielectric-base dummy gates 225 b and225 c, and the NMOS transistors N3 and N4 and the PMOS transistors P3and P4 are surrounded by the dielectric-base dummy gates 225 b and 225c. In other words, the dielectric-base dummy gates 225 b and 225 c arearranged in the boundary of the logic cell STD_9.

In the logic cell STD_9, the source region of the PMOS transistor P3 iscoupled to an overlying level through the second contact 245 e forcoupling the power supply VDD. Similarly, the source regions of the NMOStransistors N3 and N4 are coupled to an overlying level through thesecond contacts 245 f and 245 h, respectively, for coupling the groundVSS. The drain regions of the NMOS transistors N3 and N4 are coupled toa first contact 240 d. The drain region of the PMOS transistor P4 iscoupled to a second contact 245 g. Thus, the drain regions of the NMOStransistors N3 and N4 are coupled to the drain region of the PMOStransistor P4 through the first contact 240 d, an overlying level, andthe second contact 245 g. Furthermore, the source region of the PMOStransistor P4 and the drain region of the PMOS transistor P3 are coupledto the first contact 240 c.

In some embodiments, the structure of the gate electrodes 220 a through220 d includes multiple material structure selected from a groupconsisting of metals/high-K dielectric structure, Al/refractorymetals/high-K dielectric structure, W/refractory metals/high-Kdielectric, Cu/refractory metals/high-K dielectric, silicide/high-Kdielectric structure, or a combination thereof. The high-K dielectric islocated between the metal layers and the channel regions of thetransistors. The metal gate top may include a Nitride layer or a high-Kdielectric layer.

In some embodiments, the semiconductor fins 210 a, 210 b, 210 e and 210f formed on the N-type well region NW1 include an appropriateconcentration of N-type dopants (e.g., phosphorous (such as 31P),arsenic, or a combination thereof). In some embodiments, thesemiconductor fins 210 c, 210 d, 210 g and 210 h formed on the P-typewell region PW2 include an appropriate concentration of P-type dopants(e.g., boron (such as 11B), boron, boron fluorine (BF₂), or acombination thereof).

In some embodiments, the source/drain regions of the PMOS transistors P1through P4 are formed by the P-type doping region that includes anepitaxy material. The epitaxy material is selected from a groupconsisting of SiGe, or SiGeC, or Ge, or Si, or a combination thereof.

In some embodiments, the source/drain regions of the NMOS transistors N1through N4 are formed by the N-type doping region that includes anepitaxy material. The epitaxy material is selected from a groupconsisting of SiP content, SiC content, SiPC, SiAs, Si, or a combinationthereof.

In some embodiments, the first contacts 240 a through 240 d and thesecond contacts 245 a through 245 h are coupled to the respectiveoverlying levels through the corresponding vias. In some embodiments,the via includes a metal plug made of the same material.

In some embodiments, each of the first contacts 240 a through 240 d andeach of the second contacts 245 a through 245 h includes a metal plugmade of the same material. In some embodiments, the material of themetal plug is selected from a group consisting of Ti, TiN, TaN, Co, Ru,Pt, W, Al, Cu, or a combination thereof.

In some embodiments, each of the dielectric-base dummy gates 225 athrough 225 c includes the gate material formed by the single dielectriclayer or multiple layers and selected from a group consisting of SiO₂,SiOC, SiON, SiOCN, Carbon content oxide, Nitrogen content oxide, Carbonand Nitrogen content oxide, metal oxide dielectric, Hf oxide (HfO₂), Taoxide (Ta₂O₅), Ti oxide (TiO₂), Zr oxide (ZrO₂), Al oxide (Al₂O₃), Yoxide (Y₂O₃), multiple metal content oxide, or a combination thereof.

In FIG. 4, the second contacts 245 a through 245 h are arranged adjacentto the dielectric-base dummy gates 225 a through 225 c, and the firstcontacts 240 a through 240 d are arranged separated from thedielectric-base dummy gates 225 a through 225 c. For example, in thelogic cell STD_8, the second contacts 245 a and 245 b are locatedbetween the dielectric-base dummy gate 225 a and the metal gateelectrode 220 a, and the second contacts 245 c and 245 d are locatedbetween the dielectric-base dummy gate 225 b and the metal gateelectrode 220 b. Furthermore, the first contacts 240 a and 240 b arelocated between the two adjacent gate electrodes 220 a and 220 b.

Each of the first contacts is located between the two adjacent gateelectrodes and has a width W1 along the Y-direction. Each of the secondcontacts is located between the gate electrode and the dielectric-basedummy gate and has a width W2 along the Y-direction. It should be notedthat the width W2 of the second contact is greater than the width W1 ofthe first contact.

In some embodiments, the width dimension ratio of the width W2 to thewidth W1 is greater than 1.1, e.g., W2/W1>1.1. In some embodiments, thewidth dimension ratio of the width W2 to the width W1 is within a rangeof 1.05 to 1.25.

In some embodiments, the first contacts 240 a through 240 d have arectangular shape. Each of the first contacts 240 a through 240 d has alonger side (e.g., the length) along the X-direction and a narrow side(e.g., the width) along the Y-direction. In other words, the routingdirection of the longer side is parallel to the gate electrodes 220 athrough 220 d and the dielectric-base dummy gates 225 a through 225 c.In some embodiments, the dimension ratio of the longer side to thenarrow side is larger than 1.5.

In some embodiments, the second contacts 245 a through 245 h have arectangular shape. Each of the second contacts 245 a through 245 h has alonger side (e.g., the length) along the X-direction and a narrow side(e.g., the width) along the Y-direction. In other words, the routingdirection of the longer side is parallel to the gate electrodes 220 athrough 220 d and the dielectric-base dummy gates 225 a through 225 c.In some embodiments, the dimension ratio of the longer side to thenarrow side is larger than 1.5.

In some embodiments, for the PMOS transistors P1 through P4 and the NMOStransistors N1 through N4, the first contact 240 a through 240 d and thesecond contacts 245 a through 245 h corresponding to the source/drainregions and the gate contacts 255 a and 255 d corresponding to the gateregions have different shapes in the layout. For example, the firstcontact 240 a through 240 d and the second contacts 245 a through 245 hhave a rectangular shape, and the gate contacts 255 a and 255 d have around shape.

FIG. 5 illustrates a cross-sectional view of the semiconductor structureof the logic cells STD_8 and STD_9 along line A-AA in FIG. 4, inaccordance with some embodiments of the disclosure. The N-type wellregion NW1 is formed over a semiconductor substrate 310. In someembodiments, the substrate 310 is a Si substrate. In some embodiments,the material of the substrate 310 is selected from a group consisting ofbulk-Si, SiP, SiGe, SiC, SiPC, Ge, SOI-Si, SOI-SiGe, III-VI material, ora combination thereof.

The semiconductor fins 210 b and 210 f are formed on the N-type wellregion NW1. In some embodiments, the semiconductor fins 210 b and 210 finclude an appropriate concentration of N-type dopants (e.g.,phosphorous (such as 31P), arsenic, or a combination thereof).Furthermore, the semiconductor fins 210 b and 210 f are separated fromthe shallow trench isolation (STI) 320 by the dielectric-base dummygates 225 a and 225 c, respectively.

The P-type doping regions 360 a through 360 c form the source/drainregions of PMOS transistors P1 and P2 in the logic cell STD_8 on thesemiconductor fin 210 b. The second contacts 245 a and 245 c are formedon the P-type doping regions 360 a and 360 c, respectively. Furthermore,the first contact 240 a is formed on the P-type doping region 360 b. TheP-type doping regions 360 d through 360 f form the source/drain regionsof PMOS transistors P3 and P4 in the logic cell STD_9 on thesemiconductor fin 210 f. The second contacts 245 e and 245 g are formedon the P-type doping regions 360 d and 360 f, respectively. Furthermore,the first contact 240 c is formed on the P-type doping region 360 e.

In some embodiments, the source/drain silicide regions (not shown) areformed on the P-type doping regions 360 a through 360 f. In someembodiments, each of the first contacts 240 a and 240 c and each of thesecond contacts 245 a, 245 c, 245 e and 245 g includes a metal plug (notshown) and a high-K dielectric (not shown) formed on the sidewall of themetal plug. In other words, the metal plug is surrounded by the high-Kdielectric. In order to simplify the description, the source/drainsilicide regions, the metal plugs, and the high-K dielectric will beomitted.

The metal gate electrode 220 a is formed over the gate dielectrics 335and is positioned over a top surface of the semiconductor fin 210 b andbetween the P-type doping regions 360 a and 360 b. The semiconductor fin210 b overlapping the metal gate electrode 220 a, may serve as a channelregion CH_P1 of the PMOS transistor P1 in the logic cell STD_8.Furthermore, the spacers 330 are formed on opposite sides of the metalgate electrode 220 a. Thus, the metal gate electrode 220 a, thecorresponding gate dielectrics 335 and the corresponding spacers 330over the semiconductor fin 210 b form a gate structure for the PMOStransistor P1.

The metal gate electrode 220 b is formed over the gate dielectrics 335and is positioned over a top surface of the semiconductor fin 210 b andbetween the P-type doping regions 360 b and 360 c. The semiconductor fin210 b overlapping the metal gate electrode 220 b, may serve as a channelregion CH_P2 of the PMOS transistor P2 in the logic cell STD_8.Furthermore, the spacers 330 are formed on opposite sides of the metalgate electrode 220 b. Thus, the metal gate electrode 220 b, thecorresponding gate dielectrics 335 and the corresponding spacers 330over the semiconductor fin 210 b form a gate structure for the PMOStransistor P2.

The metal gate electrode 220 c is formed over the gate dielectrics 335and is positioned over a top surface of the semiconductor fin 210 f andbetween the P-type doping regions 360 d and 360 e. The semiconductor fin210 f overlapping the metal gate electrode 220 c, may serve as a channelregion CH_P3 of the PMOS transistor P3 in the logic cell STD_9.Furthermore, the spacers 330 are formed on opposite sides of the metalgate electrode 220 c. Thus, the metal gate electrode 220 c, thecorresponding gate dielectrics 335 and the corresponding spacers 330over the semiconductor fin 210 f form a gate structure for the PMOStransistor P3.

The metal gate electrode 220 d is formed over the gate dielectrics 335and is positioned over a top surface of the semiconductor fin 210 f andbetween the P-type doping regions 360 e and 360 f. The semiconductor fin210 f overlapping the metal gate electrode 220 d, may serve as a channelregion CH_P4 of the PMOS transistor P4 in the logic cell STD_9.Furthermore, the spacers 330 are formed on opposite sides of the metalgate electrode 220 d. Thus, the metal gate electrode 220 d, thecorresponding gate dielectrics 335 and the corresponding spacers 330over the semiconductor fin 210 f form a gate structure for the PMOStransistor P4.

In some embodiments, the channel regions CH_P1 through CH_P4 of the PMOStransistors P1 through P4 are SiGe channel region, and the Ge atomicconcentration is within a range of 5% to 35%.

Similar to the gate electrodes 220 a through 220 d, the spacers 330 areformed on opposite sides of each of the dielectric-base dummy gates 225a through 225 c. Furthermore, the dielectric-base dummy gates 225 athrough 225 c are located upon the edge of the semiconductor fins 210 band 210 f. The dielectric-base dummy gate 225 a is arranged upon theleft edge of the semiconductor fin 210 b, and the semiconductor fin 210b is separated from the STI 320 by the dielectric-base dummy gate 225 a.Furthermore, the dielectric-base dummy gate 225 c is arranged upon theright edge of the semiconductor fin 210 f, and the semiconductor fin 210f is separated from the STI 320 by the dielectric-base dummy gate 225 c.

The dielectric-base dummy gate 225 b is arranged upon the right edge ofthe semiconductor fin 210 b and the left edge of the semiconductor fin210 f. Therefore, the P-type doping regions 360 c and 360 d areseparated from each other by the dielectric-base dummy gate 225 b. Insome embodiments, the semiconductor fins 210 b and 210 f are separatedfrom each other by the dielectric-base dummy gate 225 b. Furthermore,the dielectric-base dummy gates 225 a through 225 c are deeper than theP-type doping regions 360 a through 360 f. In some embodiments, thedepth of the dielectric-base dummy gates 225 a through 225 c is at least20 nm deeper than the source/drain regions of the transistors formed bythe P-type doping regions 360 a through 360 f, e.g. DP1>20 nm.

In some embodiments, the depth of the dielectric-base dummy gate betweenthe two adjacent logic cells is determined according to the isolationmargin of the source/drain region of one logic cell to the source/drainregion of another logic cell for field isolation purpose. For example,the depth of the dielectric-base dummy gate 225 b between the twoadjacent logic cells STD_8 and STD_9 is determined according to theisolation margin of the source/drain region formed by the P-type dopingregion 360 c of the logic cell STD_8 to the source/drain region formedby the P-type doping region 360 d of the logic cell STD_9.

In some embodiments, the width of the dielectric-base dummy gates 225 athrough 225 c is substantially the same as that of the gate electrodes220 a through 220 d, e.g., the channel lengths of the channel regionsCH_P1 through CH_P4. In some embodiments, the width of thedielectric-base dummy gates 225 a through 225 c and the width of thegate electrodes 220 a through 220 d are within a range of 2 nm to 30 nm.

The spacers 330 of the dielectric-base dummy gate 225 a through 225 cand the gate electrodes 220 a through 220 d are formed by a singledielectric layer or multiple dielectric layers with material selectedfrom a group consisting of SiO₂, SiON, Si₃N₄, SiOCN, low K dielectric(K<3.5) material or a combination thereof.

Inter-Layer Dielectric (ILD) layer 340 is formed over the gateelectrodes 220 a through 220 d, the dielectric-base dummy gate 225 athrough 225 c and the spacer 330. Furthermore, The ILD 340 is formedover the STI 320 and the first contacts 240 a and 240 c and the secondcontacts 245 a, 245 c, 245 e and 245 g. The ILD layer 340 may be formedof an oxide such as Phospho-Silicate Glass (PSG), Boro-Silicate Glass(BSG), Boron-Doped Phospho-Silicate Glass (BPSG), Tetra Ethyl OrthoSilicate (TEOS) oxide, or the like.

In the logic cell STD_8, the second contact 245 a is formed on theP-type doping region 360 a between the metal gate electrode 220 a andthe dielectric-base dummy gate 225 a. The left side of the secondcontact 245 a is in contact with (e.g., physically touches) the spacer330 of the dielectric-base dummy gate 225 a, and the right side of thesecond contact 245 a is separated from the spacer 330 of the metal gateelectrode 220 a by the ILD layer 340. Similarly, the second contact 245c is formed on the P-type doping region 360 c between the metal gateelectrode 220 b and the dielectric-base dummy gate 225 b. The right sideof the second contact 245 c is in contact with the spacer 330 of thedielectric-base dummy gate 225 b, and the left side of the secondcontact 245 c is separated from the spacer 330 of the metal gateelectrode 220 b by the ILD layer 340. Furthermore, the first contact 240a is formed on the P-type doping region 360 b between the gateelectrodes 220 a and 220 b. The first contact 240 a is separated fromthe spacers 330 of the gate electrodes 220 a and 220 b by the ILD layer340. As described above, the width W2 of the second contacts 245 a and245 c is greater than the width W1 of the first contact 240 a.

In the logic cell STD_9, the second contact 245 e is formed on theP-type doping region 360 d between the metal gate electrode 220 c andthe dielectric-base dummy gate 225 b. The left side of the secondcontact 245 e is in contact with the spacer 330 of the dielectric-basedummy gate 225 b, and the right side of the second contact 245 e isseparated from the spacer 330 of the metal gate electrode 220 c by theILD layer 340. Similarly, the second contact 245 g is formed on theP-type doping region 360 f between the metal gate electrode 220 d andthe dielectric-base dummy gate 225 c. The right side of the secondcontact 245 g is in contact with the spacer 330 of the dielectric-basedummy gate 225 c, and the left side of the second contact 245 g isseparated from the spacer 330 of the metal gate electrode 220 d by theILD layer 340. Furthermore, the first contact 240 c is formed on theP-type doping region 360 e between the gate electrodes 220 c and 220 d.The first contact 240 c is separated from the spacers 330 of the gateelectrodes 220 c and 220 d by the ILD layer 340. As described above, thewidth W2 of the second contacts 245 e and 245 f is greater than thewidth W1 of the first contact 240 c.

In FIG. 5, the P-type doping regions 360 c and 360 d are separated fromeach other by an isolation structure formed by the dielectric-base dummygates 225 b. Compared with STI isolation purpose, the depth of thedielectric-base dummy gates 225 b is shallower due to it is served forfield isolation of the two adjacent logic cells, e.g., the source/drainregions formed by the P-type/N-type doping region of the first logiccell to the source/drain regions formed by the P-type/N-type dopingregion of the second logic cell. Furthermore, the width (or space) ofthe dielectric-base dummy gates 225 b can be equal to one gate length(Lg) width and is narrow than the STI isolation. In general, the widthof the STI isolation is at least one contacted poly pitch (CPP) width.Moreover, the STI isolation is formed during fin or oxide-definition(OD) related process, and the dielectric-base dummy gate is formedduring gate related process.

Embodiments for semiconductor structures are provided. In a logiccircuit including a plurality of logic cells, the dielectric-base dummygates serve for the adjacent cell isolation purpose and larger contactimplementation without extra cost or extra area. In each logic cell, thedielectric-base dummy gates are arranged in the boundary of the logiccell, and the gate electrodes of the transistors are arranged betweenthe dielectric-base dummy gates. Furthermore, each of the first contactsis located between the two adjacent gate electrodes and has a width W1.Each of the second contacts is located between the gate electrode andthe dielectric-base dummy gate and has a width W2. As described above,the width W2 of the second contact is greater than the width W1 of thefirst contact. Furthermore, the second contact is in contact with thedielectric-base dummy gate, thereby decreasing the capacitance betweenthe second contact and the dielectric-base dummy gate and improvingcircuit speed and power consumption in the logic cells. The secondcontacts have a larger contact size and also maintain the reliabilitymargin between the second contact to the adjacent gate electrode. Inother words, the contact landing Rc of the second contact is decreased,thereby increasing device performance of the logic cell.

In some embodiments, a semiconductor structure is provided. Thesemiconductor structure includes a semiconductor fin extending in afirst direction, a plurality of transistors, and at least onedielectric-base dummy gate extending in the second direction. Each ofthe transistors includes a first source/drain region over thesemiconductor fin, a second source/drain region over the semiconductorfin, a channel region in the semiconductor fin and between the first andsecond source/drain regions, and a metal gate electrode formed on thechannel region and extending in a second direction that is perpendicularto the first direction. In a first transistor of the transistors, afirst source/drain region is formed between the metal gate electrode ofthe first transistor and the metal gate electrode of a second transistorof the transistors, and a second source/drain region is formed betweenthe metal gate electrode of the first transistor and the dielectric-basedummy gate. The first and second transistors share a semiconductor fin.The first contact of the first source/drain region is narrower than thesecond contact of the second source/drain region along the firstdirection.

In some embodiments, a semiconductor structure is provided. Thesemiconductor structure includes a plurality of standard cells and atleast one isolation structure. Each of the transistors includes asemiconductor fin extending in a first direction, a first source/drainregion over the semiconductor fin, a second source/drain region over thesemiconductor fin, a channel region in the semiconductor fin and betweenthe first and second source/drain regions, and a metal gate electrodeformed on the channel region and extending in a second direction that isperpendicular to the first direction. The isolation structure is sharedby a first standard cell and a second standard cell. The isolationstructure includes a dielectric-base dummy gate extending in the seconddirection. The isolation structure is formed between the secondsource/drain region of a first transistor of the first standard cell andthe second source/drain region of the second transistor of the secondstandard cell. In the first standard cell, the first source/drain regionof the first transistor is formed between the metal gate electrode ofthe first transistor and the metal gate electrode of a third transistorwithin the first standard cell, and the first and third transistorsshare a semiconductor fin. In the second standard cell, the firstsource/drain region of the second transistor is formed between the metalgate electrode of the second transistor and the metal gate electrode ofa fourth transistor within the second standard cell, and the second andfourth transistors share a semiconductor fin. First contacts of thefirst source/drain regions of the first and second transistors arenarrower than second contacts of the second source/drain region of thefirst and second transistors along the first direction.

In some embodiments, a semiconductor structure is provided. Thesemiconductor structure includes a semiconductor fin extending in afirst direction, a plurality of transistors and at least onedielectric-base dummy gate extending in the second direction. Each ofthe transistors includes a first source/drain region over thesemiconductor fin, a second source/drain region over the semiconductorfin, a channel region in the semiconductor fin and between the first andsecond source/drain regions, and a metal gate electrode formed on thechannel region and extending in a second direction that is perpendicularto the first direction. In a first transistor of the transistors, thefirst source/drain region is formed between the metal gate electrode ofthe first transistor and the metal gate electrode of a second transistorof the transistors, and the second source/drain region is formed betweenthe metal gate electrode of the first transistor and the dielectric-basedummy gate. The first and second transistors shared the semiconductorfin. The first contact of the first source/drain region is separatedfrom the spacer of the second metal gate electrode, and the secondcontact of the second source/drain region is in contact with the spacerof the dielectric-base dummy gate.

The foregoing outlines nodes of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor structure, comprising: asemiconductor fin extending in a first direction; a plurality oftransistors, wherein each of the transistors comprises: a firstsource/drain region over the semiconductor fin; a second source/drainregion over the semiconductor fin; a channel region in the semiconductorfin and between the first and second source/drain regions; and a metalgate electrode formed on the channel region and extending in a seconddirection that is perpendicular to the first direction; and at least onedielectric-base dummy gate extending in the second direction, wherein ina first transistor of the transistors, the first source/drain region isformed between the metal gate electrode of the first transistor and themetal gate electrode of a second transistor of the transistors, and thesecond source/drain region is formed between the metal gate electrode ofthe first transistor and the dielectric-base dummy gate, wherein thefirst and second transistors shared the semiconductor fin, wherein afirst contact of the first source/drain region is narrower than a secondcontact of the second source/drain region along the first direction. 2.The semiconductor structure as claimed in claim 1, wherein in the firstdirection, a width ratio of the second contact to the first contact isgreater than 1.1.
 3. The semiconductor structure as claimed in claim 1,wherein in the first direction, a width ratio of the second contact tothe first contact is within a range of 1.05 to 1.25.
 4. Thesemiconductor structure as claimed in claim 1, wherein a gate width ofthe dielectric-base dummy gate is the same as that of the metal gateelectrode.
 5. The semiconductor structure as claimed in claim 1, whereingate widths of the dielectric-base dummy gate and the metal gateelectrode are within a range of 2 nm to 30 nm.
 6. The semiconductorstructure as claimed in claim 1, wherein a depth of the dielectric-basedummy gate is at least 20 nm deeper than the first and secondsource/drain regions.
 7. The semiconductor structure as claimed in claim1, wherein spacers of the dielectric-base dummy gate and spacers of themetal gate electrode are formed by a single dielectric layer or multipledielectric layers with material selected from a group consisting ofSiO₂, SiON, Si₃N₄, SiOCN, low K dielectric material or a combinationthereof.
 8. The semiconductor structure as claimed in claim 1, whereinthe first and second contacts are formed by a single metal layer ormultiple metal layers with material selected from a group consisting ofTi, TiN, Pt, Co, Ru, W, TaN, Cu or a combination thereof.
 9. Thesemiconductor structure as claimed in claim 1, wherein thedielectric-base dummy gate is formed by a single dielectric layer ormultiple dielectric layers with material selected from a groupconsisting of SiO₂, SiOC, SiON, SiOCN, Carbon content oxide, Nitrogencontent oxide, Carbon and Nitrogen content oxide, metal oxidedielectric, Hf oxide, Ta oxide, Ti oxide, Zr oxide, Al oxide, Y oxide,multiple metal content oxide or a combination thereof.
 10. Thesemiconductor structure as claimed in claim 1, wherein when thetransistor is a PMOS transistor, the channel region comprises a SiGechannel region, and Ge atomic concentration of the SiGe channel regionis within a range of 5% to 35%.
 11. A semiconductor structure,comprising: a plurality of standard cells, wherein each of the standardcells comprises: a plurality of transistors, wherein each of thetransistors comprises: a semiconductor fin extending in a firstdirection; a first source/drain region over the semiconductor fin; asecond source/drain region over the semiconductor fin; a channel regionin the semiconductor fin and between the first and second source/drainregions; and a metal gate electrode formed on the channel region andextending in a second direction that is perpendicular to the firstdirection; and at least one isolation structure, wherein the isolationstructure is shared by a first standard cell and a second standard cellof the standard cells, and comprises: a dielectric-base dummy gateextending in the second direction, and formed between the secondsource/drain region of the first transistor and the second source/drainregion of the second transistor, wherein in the first standard cell, thefirst source/drain region of the first transistor is formed between themetal gate electrode of the first transistor and the metal gateelectrode of a third transistor within the first standard cell, and thefirst and third transistors shared the semiconductor fin, wherein in thesecond standard cell, the first source/drain region of the secondtransistor is formed between the metal gate electrode of the secondtransistor and the metal gate electrode of a fourth transistor withinthe second standard cell, and the second and fourth transistors sharedthe semiconductor fin, wherein first contacts of the first source/drainregions of the first and second transistors are narrower than secondcontacts of the second source/drain regions of the first and secondtransistors along the first direction.
 12. The semiconductor structureas claimed in claim 11, wherein in the first direction, a width ratio ofthe second contacts to the first contacts is greater than 1.1, and thefirst and second contacts are rectangular, wherein a dimension ratio ofa first side along the second direction to a second side along the firstdirection of the rectangular shape is larger than 1.5.
 13. Thesemiconductor structure as claimed in claim 11, wherein a gate width ofthe dielectric-base dummy gate is the same as that of the metal gateelectrode, and the gate widths of the dielectric-base dummy gate and themetal gate electrode are within a range of 2 nm to 30 nm.
 14. Thesemiconductor structure as claimed in claim 11, wherein a depth of thedielectric-base dummy gate is at least 20 nm deeper than the first andsecond source/drain regions.
 15. The semiconductor structure as claimedin claim 11, wherein spacers of the dielectric-base dummy gate and themetal gate electrode are formed by a single dielectric layer or multipledielectric layers with material selected from a group consisting ofSiO₂, SiON, Si₃N₄, SiOCN, low K dielectric material or a combinationthereof.
 16. The semiconductor structure as claimed in claim 11, whereinthe first and second contacts are formed by a single metal layer ormultiple metal layers with material selected from a group consisting ofTi, TiN, Pt, Co, Ru, W, TaN, Cu or a combination thereof.
 17. Asemiconductor structure, comprising: a semiconductor fin extending in afirst direction; a plurality of transistors, wherein each of thetransistors comprises: a first source/drain region over thesemiconductor fin; a second source/drain region over the semiconductorfin; a channel region in the semiconductor fin and between the first andsecond source/drain regions; and a metal gate electrode formed on thechannel region and extending in a second direction that is perpendicularto the first direction; and at least one dielectric-base dummy gateextending in the second direction, wherein in a first transistor of thetransistors, the first source/drain region is formed between the metalgate electrode of the first transistor and the metal gate electrode of asecond transistor of the transistors, and the second source/drain regionis formed between the metal gate electrode of the first transistor andthe dielectric-base dummy gate, wherein the first and second transistorsshared the semiconductor fin, wherein a first contact of the firstsource/drain region is separated from a spacer of the second metal gateelectrode, and a second contact of the second source/drain region is incontact with a spacer of the dielectric-base dummy gate.
 18. Thesemiconductor structure as claimed in claim 17, wherein in the firstdirection, a width ratio of the second contact to the first contact isgreater than 1.1.
 19. The semiconductor structure as claimed in claim17, wherein the first and second contacts are formed by a single metallayer or multiple metal layers with material selected from a groupconsisting of Ti, TiN, Pt, Co, Ru, W, TaN, Cu or a combination thereof.20. The semiconductor structure as claimed in claim 17, wherein adimension ratio of a first side along the second direction to a secondside along the first direction of the rectangular shape is larger than1.5.